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  document number: 81753 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 04-mar-08 1 optocoupler, phototransistor output, high temperature, 110 c, rated vo615a vishay semiconductors description the vo615a consists of a phot otransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. the elements are mounted on on e leadframe, providing a fixed distance between input and output for highest safety requirements. applications circuits for safe protective separation against electrical shock according to safety cla ss ii (reinforced isolation): ? for appl. class i - iv at mains voltage 300 v ? for appl. class i - iv at mains voltage 600 v according to table 1 of iec 60664-1, suitable for: - switch-mode power supplies - line receiver - computer peripheral interface - microprocessor system interface features ? ctr offered in 9 groups ? isolation materials according to ul94-vo ? pollution degree 2 (din/vde 0110/resp. iec 60664) ? climatic classification 40/110/21 (iec 60068 part 1) ? temperature range - 40 c to + 110 c ? rated impulse voltage (t ransient overvoltage) v iotm = 8 kv peak ? isolation test voltage (parti al discharge test voltage) v pd = 1.6 kv ? rated isolation voltage (rms includes dc) v iowm = 600 v rms ? rated recurring peak voltage (repetitive) v iorm = 850 v peak ? creepage current resistance according to vde 0303/ iec 60112 comparative tracking index: cti 175 ? thickness through insulation 0.75 mm ? external creepage distance > 8 mm agency approvals ? bsi: en 60065:2002, en 60950:2000 certificate 8967/8968 ? din en 60747-5-2 (vde 0884) pending din en 60747-5-5 pending ? fimko pending c e 1791 8 _2 1 v de c a c order information part remarks vo615a ctr 50 to 600 %, dip-4 vo615a-1 ctr 40 to 80 %, dip-4 vo615a-2 ctr 63 to 125 %, dip-4 vo615a-3 ctr 100 to 200 %, dip-4 vo615a-4 ctr 160 to 320 %, dip-4 vo615a-5 ctr 50 to 150 %, dip-4 vo615a-6 ctr 100 to 300 %, dip-4 vo615a-7 ctr 80 to 160 %, dip-4 vo615a-8 ctr 130 to 260 %, dip-4 vo615a-9 ctr 200 to 400 %, dip-4 vo615a-x006 ctr 50 to 600 %, dip-4, 400 mil (option 6) vo615a-1x006 ctr 40 to 80 %, dip-4, 400 mil (option 6) vo615a-2x006 ctr 63 to 125 %, dip-4, 400 mil (option 6) vo615a-3x006 ctr 100 to 200 %, dip-4, 400 mil (option 6) vo615a-4x006 ctr 160 to 320 %, dip-4, 400 mil (option 6) vo615a-5x006 ctr 50 to 150 %, dip-4, 400 mil (option 6)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81753 2 rev. 1.0, 04-mar-08 vo615a vishay semiconductors optocoupler, phototransistor output, high temperature, 110 c, rated note for additional information on the possible lead bend and vde options refer to option information. notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (2) refer to reflow profile for soldering condi tions for surface mounted devices (smd). refe r to wave profile for soldering conditi ons for through hole devices (dip). vo615a-6x006 ctr 100 to 300 %, dip-4, 400 mil (option 6) vo615a-7x006 ctr 80 to 160 %, dip-4, 400 mil (option 6) vo615a-8x006 ctr 130 to 260 %, dip-4, 400 mil (option 6) vo615a-9x006 ctr 200 to 400 %, dip-4, 400 mil (option 6) vo615a-x007 ctr 50 to 600 %, smd-4 (option 7) vo615a-1x007 ctr 40 to 80 %, smd-4 (option 7) vo615a-2x007 ctr 63 to 125 %, smd-4 (option 7) vo615a-3x007 ctr 100 to 200 %, smd-4 (option 7) vo615a-4x007 ctr 160 to 320 %, smd-4 (option 7) vo615a-5x007 ctr 50 to 150 %, smd-4 (option 7) vo615a-6x007 ctr 100 to 300 %, smd-4 (option 7) vo615a-7x007 ctr 80 to 160 %, smd-4 (option 7) vo615a-8x007 ctr 130 to 260 %, smd-4 (option 7) vo615a-9x007 ctr 200 to 400 %, smd-4 (option 7) vo615a-x009 ctr 50 to 600 %, smd-4 (option 9) vo615a-1x009 ctr 40 to 80 %, smd-4 (option 9) vo615a-2x009 ctr 63 to 125 %, smd-4 (option 9) vo615a-3x009 ctr 100 to 200 %, smd-4 (option 9) vo615a-4x009 ctr 160 to 320 %, smd-4 (option 9) absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 s i fsm 1.5 a led power dissipation at 25 c p diss 100 mw output collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma output power dissipation at 25 c p diss 150 mw coupler isolation test voltage (rms) t = 1 min v iso 5000 v rms operating ambient temperature range t amb - 40 to + 110 c storage temperature range t stg - 40 to + 125 c soldering temperature (2) 2 mm from case, 10 s t sld 260 c order information part remarks
document number: 81753 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 04-mar-08 3 vo615a optocoupler, phototransistor output, high temperature, 110 c, rated vishay semiconductors notes (1) the thermal model is represented in the ther mal network below. each resistance value gi ven in this model can be used to calcula te the temperatures at each node for a given oper ating condition. the thermal resistance fr om board to ambient will be dependent on th e type of pcb, layout and thickness of copper traces. for a detailed expl anation of the thermal model, pleas e reference vishay's thermal characteristics of opto couplers application note. (2) for 2 layer fr4 board (4" x 3" x 0.062). thermal characteristics (1) parameter test condition symbol value unit maximum led junction temperature t jmax 125 c maximum output die junction temperature t jmax 125 c thermal resistance, junction emitter to board eb 173 c/w thermal resistance, junction emitter to case ec 149 c/w thermal resistance, j unction detector to board db 111 c/w thermal resistance, junction detector to case dc 127 c/w thermal resistance, junction emitter to junction detector ed 173 c/w thermal resistance, board to ambient (2) ba 197 c/w thermal resistance, case to ambient (2) ca 4041 c/w t a ca t c t jd t je t b ec eb dc db ba de t a 19996 package
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81753 4 rev. 1.0, 04-mar-08 vo615a vishay semiconductors optocoupler, phototransistor output, high temperature, 110 c, rated note t amb = 25 c, unless otherwise specified. minimum and maximum values are testing requi rements. typical values ar e characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. electrical characteristics (1) parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf output collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 a v eco 7v collector emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 10 100 na coupler collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 1 ma vo615a-1 ctr 13 30 % vo615a-2 ctr 22 45 % vo615a-3 ctr 34 70 % vo615a-4 ctr 56 90 % v ce = 5 v, i f = 5 ma vo615a ctr 50 600 % vo615a-5 ctr 50 150 % vo615a-6 ctr 100 300 % vo615a-7 ctr 80 160 % vo615a-8 ctr 130 260 % vo615a-9 ctr 200 400 % v ce = 5 v, i f = 10 ma vo615a-1 ctr 40 80 % vo615a-2 ctr 63 125 % vo615a-3 ctr 100 200 % vo615a-4 ctr 160 320 %
document number: 81753 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 04-mar-08 5 vo615a optocoupler, phototransistor output, high temperature, 110 c, rated vishay semiconductors note according to din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending (s ee figure 1). this optocoupler is suitable for safe electri cal isolation only within the safety ratings. compliance with the safety rati ngs shall be ensured by means of suitable protecti ve circuits. fig. 1 - derating diagram fig. 2 - test pulse diagram for sa mple test according to din en 60747-5-2 (vde 0884)/din en 60747-; iec 60747 maximum safety ratings parameter test condition symbol min. typ. max. unit input forward current i f 130 ma output power dissipation p diss 265 mw coupler safety temperature t si 150 c insulation rated parameters parameter test condition symbol min. typ. max. unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 rated impulse voltage v iotm 8kv max. working voltages recurring peak voltage v iorm 850 v peak 0 25 50 75 125 0 50 100 150 200 300 p tot - total po w er dissipation (m w ) t si - safety temperat u re (c) 150 94 91 8 2 100 250 phototransistor p si (m w ) ir-diode i si (ma) t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v io w m v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81753 6 rev. 1.0, 04-mar-08 vo615a vishay semiconductors optocoupler, phototransistor output, high temperature, 110 c, rated fig. 3 - test circuit, non-saturated operation fig. 4 - test circuit, saturated operation fig. 5 - switching times switching characteristics parameter test condition symbol min typ. max unit delay time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t d 3.0 s rise time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t r 3.0 s fall time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t f 4.7 s storage time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t on 6.0 s turn-off time v s = 5 v, i c = 2 ma, r l = 100 , (see figure 3) t off 5.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t on 9.0 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t off 10.0 s channel i channel ii 95 10 8 04 r g = 50 t p t p = 50 s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adj u sted thro u gh inp u t amplit u de oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10 8 43 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c 96 1169 8 t p p u lse d u ration t d delay time t r rise time t on (= t + t ) d r t u rn-on time t s storage time t f fall time t off (= t s + t f )t u rn-off time
document number: 81753 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.0, 04-mar-08 7 vo615a optocoupler, phototransistor output, high temperature, 110 c, rated vishay semiconductors package dimensions in millimeters 0.029 (0.74) 0.095 (2.41) 0.04 8 (1.22) 0.012 (0.30) 0.296 (7.52) i17 8 027-2 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 0.179 (4.55) 0.190 (4. 8 3) 0.030 (0.76) 0.045 (1.14) 0.105 (2.67) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 3 to 9 0.052 (1.32) 0.00 8 (0.20) 0.033 (0. 8 4) 0.250 (6.35) 0.230 (5. 8 4) iso method a 0.312 (7.92) pin 1 identifier 0.110 (2.79) 0.130 (3.30) 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) option 7 20 8 02 0.300 (7.62) typ. 0.150 (3. 8 1) 0.130 (3.30) 0.472 (12.00) max. 0.365 (9.27) min. 0.020 (0.50) 0.000 (0.00) option 8 min. 15 max. option 9 0.375 (9.53) 0.395 (10.03) 0.312 (7.92) 0.020 (0.51) 0.040 (1.02) 0.315 ( 8 .00) 0.040 (0.102) 0.09 8 (0.249) 0.012 (0.30) 0.296 (7.52) 0.00 8 (0.20) 0.100 (2.54) 0.070 (1.7 8 ) 0.030 (0.76) 0.315 ( 8 .00) min. 0.060 (1.52) 0.435 (11.05) 0.392 (9.95) min. r 0.010 (0.25) 0.100 (2.54) 0.070 (1.7 8 ) 0.030 (0.76) 0.315 ( 8 .00) min. 0.060 (1.52) 0.435 (11.05) r 0.010 (0.25) 0.100 (2.54) 0.070 (1.7 8 ) 0.030 (0.76) 0.060 (1.52) r 0.010 (0.25) 0.512 (13.00)
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 81753 8 rev. 1.0, 04-mar-08 vo615a vishay semiconductors optocoupler, phototransistor output, high temperature, 110 c, rated ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.


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